
Specification
Purity,% 99.6 99.9997 99.9999
Oxygen ≤ 1 ppmw ≤0.1 ppmv ≤0.1 ppmv
Hydrogen ≤ 0.4%
Nitrogen
≤1.0 ppmv ≤0.1 ppmv
Carbon dioxide
≤0.1 ppmv ≤0.1 ppmv
Carbon monoxide
≤0.1 ppmv ≤0.05 ppmv
Methane
≤0.1 ppmv ≤0.1 ppmv
Moisture
≤1.0 ppmv ≤0.1 ppmv
Argon
≤0.1 ppmv
Arsine
≤0.05 ppmv
Germane
≤0.05 ppmv
Hydrogen sulfide
≤0.05 ppmv
Silane
≤0.05 ppmv
transportation
DOT shipping name Phosphine
DOT classification 2.3
DOT label Toxic, flammable gas
UN NO. UN 2199
CAS No. 7803-51-2
CGA/DISS/JIS/BS341
/DIN477
350/632/W22-14L/NO.4/NO.1
Transportation status Liquefied gas
Technical Information
Cylinder condition @ 21.1°C liquid
Combustion limit in air 1.6-98%
Natural temperature (°C) 40
Molecular weight (g/mol) 33.998
Specific gravity (air =1) 1.17
Critical temperature (°C) 51.6
Critical temperature (psig) 933.2
Application
1. As an n-type dopant in semiconductor manufacturing
2. In semiconductor manufacturing, the process of epitaxial silicon
3. In semiconductor manufacturing, the doping of selected regions on the crystal source.
4. In semiconductor manufacturing, used for doping polysilicon interconnects or certain capacitors
5. In semiconductor manufacturing, used to form borophosphosilicate glass
6. In semiconductor manufacturing, ion implantation.